1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature
- Submitting institution
-
The University of Sheffield
- Unit of assessment
- 12 - Engineering
- Output identifier
- 2646
- Type
- D - Journal article
- DOI
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10.1364/oe.22.022608
- Title of journal
- Optics Express
- Article number
- -
- First page
- 22608
- Volume
- 22
- Issue
- 19
- ISSN
- 1094-4087
- Open access status
- Out of scope for open access requirements
- Month of publication
- September
- Year of publication
- 2014
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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4
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The work reports an innovative infrared single photon avalanche diode made with an alternative avalanche material, InAlAs. The measured detection efficiency represents a significant improvement over previous attempts. Experimental data includes both single photon counting characteristics across 260K to room temperature and confirmation of the device structure (through capacitance data). The positive results led to an award from Innovate UK (£270k, TS/T016426/1) and further research projects on alternative avalanche materials for single photon avalanche diode (H2020 ITN "PROMIS").
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -