Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
- Submitting institution
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The University of Liverpool
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12277
- Type
- D - Journal article
- DOI
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10.1063/1.4942093
- Title of journal
- Applied Physics Letters
- Article number
- 072901
- First page
- -
- Volume
- 108
- Issue
- 7
- ISSN
- 0003-6951
- Open access status
- Out of scope for open access requirements
- Month of publication
- February
- Year of publication
- 2016
- URL
-
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- Supplementary information
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- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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8
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The doping process reported in this paper was exploited to secure further funding (EP/M00662X/1, ?500k) for resistive switching in RRAM research. The research was the subject of an invited presentation at the 21st biennial conference of INFOS 2019 "Insulating Films on Semiconductors", Clare College, Cambridge University, 2019.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -