Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1274
- Type
- D - Journal article
- DOI
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10.1109/TED.2017.2669644
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 1467
- Volume
- 64
- Issue
- 4
- ISSN
- 0018-9383
- Open access status
- Compliant
- Month of publication
- March
- Year of publication
- 2017
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
12
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work, for the first time, proposed a direct method of extracting generated defect for CMOS MOSFETs, laying the foundation for reliability modelling and leading to an invited presentation to major foundries: Infineon (E. Hanafi, Reliability Team Leader, E.Hanafi@infineon.com); Siterra (G.K. Kuang, Senior Researcher, gkuang@siterra.my); and MIMOS (E. Bautista, Director, ebautista@mimos.my). The work led to an invited address to the prestigious Institute of Microelectronics of Chinese Academy of Sciences (http://english.ime.cas.cn/ns/icn/201609/t20160912_167608.html) and an IET travel award (http://conferences.theiet.org/achievement/winners/travel/winners-2016.cfm). Part of the work resulted in a best paper award at IPFA 2018, Singapore (N. Raghavan, Technical Program Chair, nagarajan@sutd.edu.sg).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -