A planar distributed channel AlGaN/GaN HEMT technology
- Submitting institution
-
University of Glasgow
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12-03343
- Type
- D - Journal article
- DOI
-
10.1109/TED.2019.2907152
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 2454
- Volume
- 66
- Issue
- 5
- ISSN
- 0018-9383
- Open access status
- Technical exception
- Month of publication
- May
- Year of publication
- 2019
- URL
-
http://eprints.gla.ac.uk/182479/
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
2
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The research describes the development of devices that were developed as part of the EPSRC funding (EP/R024413/1, https://gow.epsrc.ukri.org/NGBOViewGrant.aspx?GrantRef=EP/R024413/1, £574k) in partnership with major industrial partners including INEX Microtechnology, Optocap and Rolls Royce. It is expected that the technology will form the basis for future high performance high power GaN devices for high speed and high frequency electronics underpinning new application areas from wireless communications to electric vehicles.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
