Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors
- Submitting institution
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The University of Warwick
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12371
- Type
- D - Journal article
- DOI
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10.1021/acsnano.0c00604
- Title of journal
- ACS Nano
- Article number
- -
- First page
- 5754
- Volume
- 14
- Issue
- 5
- ISSN
- 1936-0851
- Open access status
- Technical exception
- Month of publication
- March
- Year of publication
- 2020
- URL
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-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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14
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Controlling quantum effects when scaling down electronic devices represent a formidable technological challenge. This paper represents a paradigm shift by harnessing quantum effects rather than trying to circumvent them. This radical approach involves atomically precise graphene nanoribbons (APRs) readily synthesised from carbon (an environmentally friendly, abundant and inexpensive element). The properties of APRs are determined by their structural design at the single atom level and therefore they can be used as multifunctional devices for nanoelectronic applications. This project led to collaboration with three world-leading experimental groups at EMPA, TU Delft and Thales.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -