Characterization of arsenic plasma doping and postimplant processing of silicon using medium energy ion scattering
- Submitting institution
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The University of Huddersfield
- Unit of assessment
- 12 - Engineering
- Output identifier
- 52
- Type
- D - Journal article
- DOI
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10.1116/1.5088954
- Title of journal
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
- Article number
- 032901
- First page
- -
- Volume
- 37
- Issue
- 3
- ISSN
- 2166-2746
- Open access status
- Compliant
- Month of publication
- April
- Year of publication
- 2019
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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2
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Plasma doping (PLAD) is increasingly applied in micro-electronic device manufacture to produce high fluence and conformal shallow implants. Performed collaboratively with Applied Materials, the world’s largest semiconductor equipment manufacturer, the research comprises a first MEIS depth profiling study of AsH3/H2 plasma doped implants in silicon that provides a detailed picture of ultra-shallow As build up and activation. The work led to an invited talk at the Ion Beam Analysis conference (Shanghai, 2018) and was considered “of immense value to the community interested in the limits of ultra-shallow high dose doping for advanced memory and logic applications” by the journal referee.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -