Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1283
- Type
- D - Journal article
- DOI
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10.1109/TED.2014.2313038
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 1501
- Volume
- 61
- Issue
- 5
- ISSN
- 0018-9383
- Open access status
- Out of scope for open access requirements
- Month of publication
- April
- Year of publication
- 2014
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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8
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The work develops a charge-pumping technique for 3-D nanoscale vertical flash memory devices, to identify the cause of threshold voltage variation. The technique has been implemented at the IMEC research institute by LJMU researchers under a collaboration agreement (€350k IMEC-costed, 2012-2015); and presented to its core industry partners including Intel and Samsung, enabling development of 3D non-volatile flash memory (Dr. G. Van den Bosch, IMEC Flash Memory Group Manager, Geert.VandenBosch@imec.be). The work has also led to a formal collaboration agreement with the Shanghai Precision Metrology and Test Institute (Dr. W. Zhu, SPMTI director, congzwm@126.com, £20k, 2017-2020, PI: W Zhang).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -