Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application
- Submitting institution
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Coventry University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 23197835
- Type
- D - Journal article
- DOI
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10.1088/0268-1242/29/2/025007
- Title of journal
- Semiconductor Science and Technology
- Article number
- 025007
- First page
- -
- Volume
- 29
- Issue
- 2
- ISSN
- 0268-1242
- Open access status
- Out of scope for open access requirements
- Month of publication
- January
- Year of publication
- 2014
- URL
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- Supplementary information
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- Request cross-referral to
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- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
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- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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2
- Research group(s)
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- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Simulated and detailed time-dependent behaviour of gallium nitride (GaN) high electron mobility transistors (HEMTs) using a hydro-dynamic model for the first time. Simulations were fully verified by calibrating to experimental data. Cited in white paper (https://pdfs.semanticscholar.org/f4bf/15a2d608e6ae88871643eb11bad41ab6814a.pdf), highlighting the superiority and importance of our methodology to fully explain GaN HEMTs behaviour. Led to invited talk at IEEE MIEL conference (https://ieeexplore.ieee.org/document/6842089) and two projects: £1M WEFO FLEXIS (WP18), (http://www.flexis.wales/research-item/wp18-smart-energy-management/) and £59k NRN Dynamic characterisation and modelling of RF GaN HEMTs.
- Author contribution statement
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- Non-English
- No
- English abstract
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