Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
- Submitting institution
-
London South Bank University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 278598
- Type
- D - Journal article
- DOI
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10.1103/PhysRevLett.114.016405
- Title of journal
- Physical Review Letters
- Article number
- 016405
- First page
- -
- Volume
- 114
- Issue
- 1
- ISSN
- 0031-9007
- Open access status
- Out of scope for open access requirements
- Month of publication
- January
- Year of publication
- 2015
- URL
-
https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.114.016405
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
8
- Research group(s)
-
C - The London Centre for Energy Engineering
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This paper featured a novel modelling approach to study dopants and defects in p-type GaN, which provided insights into the properties of this key material for solid state lighting that were not possible to determine from conventional modelling approaches. The results were highlighted in the RSC magazine Chemistry World and the Elsevier magazine Materials Today (both in January 2015). The work was presented at the international Materials Research Society Fall Meeting in Boston, 2014, providing a major showcase for the UK-based code ChemShell. It aided the case for promotion to Reader for Profs. Scott Woodley and David Scanlon at UCL.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -