Cascade capture of charge carriers in highly doped semiconductors
- Submitting institution
-
The University of Leeds
- Unit of assessment
- 12 - Engineering
- Output identifier
- ELEC-75
- Type
- D - Journal article
- DOI
-
10.1063/1.5035301
- Title of journal
- Journal of Applied Physics
- Article number
- 085704
- First page
- -
- Volume
- 124
- Issue
- 8
- ISSN
- 0021-8979
- Open access status
- Compliant
- Month of publication
- August
- Year of publication
- 2018
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
6
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This paper studies the interaction of electrons with dopant atoms in bulk semiconductors. The basic phenomenon is well-known, but previous attempts to describe it theoretically have failed to produce good agreement with experiment. Here, a new, rigorous theoretical model is developed, and experimentally verified, which (a) considers an entire array of impurities rather than a single impurity atom and (b) describes electron-impurity interactions as a transport phenomenon in energy space. This new theoretical capability is significant for design of opto-electronic devices, e.g. terahertz lasers, or qubits based on impurities in semiconductors, complementing research on the EPSRC HyperTerahertz Programme grant (EP/P021859/1).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
