Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
- Submitting institution
-
Cardiff University / Prifysgol Caerdydd
- Unit of assessment
- 11 - Computer Science and Informatics
- Output identifier
- 96287680
- Type
- D - Journal article
- DOI
-
10.1063/1.4994148
- Title of journal
- Journal of Applied Physics
- Article number
- 223903
- First page
- -
- Volume
- 122
- Issue
- 22
- ISSN
- 0021-8979
- Open access status
- Compliant
- Month of publication
- December
- Year of publication
- 2017
- URL
-
https://doi.org/10.1063/1.4994148
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- Yes
- Number of additional authors
-
3
- Research group(s)
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V - Visual computing
- Citation count
- 1
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- We developed the first simulation code able to model Dresselhaus and Rashba effects due to spin-orbit couplings for an experimentally verified, ensemble self-consistent Monte Carlo semiconductor device simulator (supported by a Ser Cymru NRN grant with Swansea University, 120K GBP, grant: 082). We demonstrate, for the first time, the ability to coherently control the spin polarisation of electrons and the strain-sensitivity of the drain current in an InGaAs MOSFET transistor at room temperatures in simulation. The code has been fully integrated with Swansea University’s finite element ensemble Monte Carlo simulation toolbox, and supported a feasibility grant from CS Hub (https://compoundsemiconductorhub.org/wp-content/uploads/2018/09/Hub_Newsletter_201809.pdf)
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -