An investigation of temperature sensitive electrical parameters for SiC power MOSFETs
- Submitting institution
-
The University of Warwick
- Unit of assessment
- 12 - Engineering
- Output identifier
- 7510
- Type
- D - Journal article
- DOI
-
10.1109/TPEL.2016.2631447
- Title of journal
- IEEE Transactions on Power Electronics
- Article number
- -
- First page
- 7954
- Volume
- 32
- Issue
- 10
- ISSN
- 0885-8993
- Open access status
- Compliant
- Month of publication
- October
- Year of publication
- 2017
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
4
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Reports the first systematic investigation of the temperature-sensitive electrical parameters needed for condition monitoring of silicon carbide power MOSFETs. Led to industrial funding from Bourns Inc (stephen.russell@bourns.com), culminating in a successful 4-year £170k Royal Society Industry Fellowship targeting the development of medium-voltage automotive devices for vehicle electrification. The fellow will spend 50% of their time working with Bourns Inc, with support of JLR, to accelerate the development of more efficient power devices for electric vehicle traction systems. Led to an invited lecture at the European Centre of Power Electronics (ECPE) workshop on condition monitoring (July 2017, Aalborg, Denmark).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -