A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1245
- Type
- D - Journal article
- DOI
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10.1109/TED.2016.2597540
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 3830
- Volume
- 63
- Issue
- 10
- ISSN
- 0018-9383
- Open access status
- Compliant
- Month of publication
- September
- Year of publication
- 2016
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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6
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- A key output of EPSRC grants (EP/I012966/1, EP/L010607/1 and EP/M006727/1, 2011-2014), developing a novel technique capturing defect energy signatures across high-κ gate dielectric in Ge based pMOSFETs. Significance: the power-law kinetics of defect generation are restored successfully by a new procedure, enabling accurate lifetime prediction in Ge process/device optimization in the development of sub 10-nm technology. It was disseminated to IMEC and its industrial partners including Intel and ARM (Dr. D. Linten, IMEC device characterisation manager, Dimitri.Linten@imec.be), and led to presentations at the field’s two flagship conferences, IEDM and the VLSI Symposium (http://doi.org/10.1109/IEDM.2014.7047166; http://doi.org/10.1109/VLSIT.2015.7223692).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -