As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI)
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1258
- Type
- D - Journal article
- DOI
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10.1109/TED.2018.2857000
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 3662
- Volume
- 65
- Issue
- 9
- ISSN
- 0018-9383
- Open access status
- Compliant
- Month of publication
- August
- Year of publication
- 2018
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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4
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The As-grown-Generation model produced with funding from the EPSRC (EP/L010607/1) has been used to qualify new processes and materials for devices using future generation technologies (Guido Groeseneken, IMEC Fellow, groes@imec.be). The model is also being adopted by Electronic Design Automation suppliers to reduce the gap between simulation and Silicon performance (Synopsys, Xingsheng.Wang@synopsys.com). It led to the best paper award at the IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2019 (https://www.zeiss.com.tw/corporate/website/forms/events.html?event=IPFA-Int%27l-Symposium-on-the-Physical-Failure-Analysis-of-Integrated-Circuits-Jul-2019). The authors were invited and funded to deliver training tutorials to R&D engineers on model implementation (Tutorial organiser, nagarajan@sutd.edu.sg).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -