Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide
- Submitting institution
-
University of Durham
- Unit of assessment
- 12 - Engineering
- Output identifier
- 118745
- Type
- D - Journal article
- DOI
-
10.1088/1361-6641/aa61de
- Title of journal
- Semiconductor Science and Technology
- Article number
- 054003
- First page
- -
- Volume
- 32
- Issue
- 5
- ISSN
- 02681242
- Open access status
- Compliant
- Month of publication
- -
- Year of publication
- 2017
- URL
-
https://doi.org/10.1088/1361-6641/aa61de
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
11
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The paper was an invited contribution to a special edition edited by Zetterling on the topic of Electronics in Extreme Environments; the work had also been presented as an invited talk at the MRS conference (2014) and an invited tutorial at the IEEE Sensors Conference (2015). The results published were the culmination of a ten year development of a commercial silicon carbide process, funded by EPSRC, Innovate and Scottish Enterprise. The data showed the first fully operational CMOS circuitry operable above 300OC. The research outputs described in the paper have been taken on by Rolls Royce for further development (Simon.turvey@rolls-royce.com)
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
