An InGaAlAs–InGaAs Two-Color Photodetector for Ratio Thermometry
- Submitting institution
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The University of Sheffield
- Unit of assessment
- 12 - Engineering
- Output identifier
- 2740
- Type
- D - Journal article
- DOI
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10.1109/TED.2013.2297409
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 838
- Volume
- 61
- Issue
- 3
- ISSN
- 0018-9383
- Open access status
- Out of scope for open access requirements
- Month of publication
- February
- Year of publication
- 2014
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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5
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Two-colour detectors used in thermal imaging and radiation thermometry instruments require expensive, manual placing of two separate detectors, which also introduces measurement uncertainty. Here we present the first two-colour detector, produced from a custom-designed semiconductor wafer, effectively eliminating the manual placing process. The detector is compatible with conventional stacked manufacturing technology. We report full device performance parameters, such as dark current, photoresponse and signal-to-noise ratio, and compare data with conventional commercial detectors. The work has secured industry support and commercial funding (£83K, contact: Managing Director of AMETEK Land), and orchestrated a KTP project (IUK and Land Instruments, £66k, ref:509578).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -