Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer
- Submitting institution
-
University of Durham
- Unit of assessment
- 12 - Engineering
- Output identifier
- 109131
- Type
- D - Journal article
- DOI
-
10.1002/adom.201500474
- Title of journal
- Advanced Optical Materials
- Article number
- -
- First page
- 231
- Volume
- 4
- Issue
- 2
- ISSN
- 21951071
- Open access status
- Out of scope for open access requirements
- Month of publication
- -
- Year of publication
- 2015
- URL
-
https://doi.org/10.1002/adom.201500474
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
5
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Poor quantum efficiency and narrow light-emitting area limits the applications of hybrid light-emitting transistors (HLETs) for displays. This work showcases HLETs with unprecedented aperture ratios of >50%, easily surpassing the commercial available AMOLED displays. The large aperture ratios of these novel HLETs were achieved by engineering the charge transport and interface energies. This new pixel design enables exceptionally high electrical and optical performance while maintaining the fabrication advantage of solution processability and has been picked up specifically by Muccini group (direttore.ismn@cnr.it) to advance the field in order to understand injection and recombination mechanism.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
