A novel growth method to improve the quality of GaAs nanowires grown by Ga-assisted chemical beam epitaxy
- Submitting institution
-
University of the West of Scotland
- Unit of assessment
- 12 - Engineering
- Output identifier
- 13049045
- Type
- D - Journal article
- DOI
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10.1021/acs.nanolett.8b00702
- Title of journal
- Nano Letters
- Article number
- -
- First page
- 3608
- Volume
- 18
- Issue
- 6
- ISSN
- 1530-6984
- Open access status
- Deposit exception
- Month of publication
- May
- Year of publication
- 2018
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
3
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The successful synthesis of high crystalline quality and high aspect ratio GaAs nanowires (NWs) with a uniform diameter is needed to develop advanced applications beyond the limits established by thin film and bulk material properties. This work is significant, because it presents a novel and easy to develop growth method (i.e., without using advanced nanolithography techniques) to prevent the nucleation of parasitic species, while preserving the quality of GaAs NWs even for long duration growths. Since its publication, the so-called two-step-based growth method has been adopted by many groups to produce higher quality III-V NWs for different applications.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
