Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors
- Submitting institution
-
University of Nottingham, The
- Unit of assessment
- 9 - Physics
- Output identifier
- 1329610
- Type
- D - Journal article
- DOI
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10.1103/PhysRevLett.116.186603
- Title of journal
- Physical Review Letters
- Article number
- 186603
- First page
- -
- Volume
- 116
- Issue
- 18
- ISSN
- 0031-9007
- Open access status
- Out of scope for open access requirements
- Month of publication
- May
- Year of publication
- 2016
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
15
- Research group(s)
-
C - Condensed Matter Theory
- Citation count
- 57
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- -
- Author contribution statement
- Prof. Fromhold contributed to the theory of electron and hole tunnelling in the graphene-boron nitride structures reported, including development of the transfer-Hamiltonian formalism [e.g. Eq. (1)] for tunnelling between 2D materials and the inclusion of phonon-mediated transitions. This formalism was used to calculate the tunnel current and differential conductance in Figures 2 and 3. Prof. Fromhold also analysed the calculations presented in Fig. 2(b) and how the distinct transport regimes that they reveal correspond to the experimental data in Fig. 2(a). In addition, he drafted parts of the manuscript and contributed to iterative writing of the whole paper.
- Non-English
- No
- English abstract
- -
