Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
- Submitting institution
-
University of Glasgow
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12-12239
- Type
- D - Journal article
- DOI
-
10.1063/1.4942093
- Title of journal
- Applied Physics Letters
- Article number
- 72901
- First page
- -
- Volume
- 108
- Issue
- 7
- ISSN
- 0003-6951
- Open access status
- Out of scope for open access requirements
- Month of publication
- February
- Year of publication
- 2016
- URL
-
http://eprints.gla.ac.uk/117294/
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
8
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The output highlights the collaborative nature of the "PowerGaN" EPSRC Programme Grant (EP/K014471/1, https://gow.epsrc.ukri.org/NGBOViewGrant.aspx?GrantRef=EP/K014471/1, £6.1m) which brought together UK activity in GaN electronics and which subsequently led to the award of the GaNDaME Programme Grant (EP/P00945X/1, https://gow.epsrc.ukri.org/NGBOViewGrant.aspx?GrantRef=EP/P00945X/1, £4.3m). The output also led to the INNOVATEUK funded “ALEGRO” project (103445) with Oxford Instruments Plasma Technology Ltd in which industrial staff were seconded fulltime a “researcher in residence” to The School of Engineering, to develop emerging plasma processing technologies. The research ultimately supported the launch of a new processing tool (https://plasma.oxinst.com/products/atomic-layer-deposition/atomfab and https://plasma.oxinst.com/media-centre/wp/ald-for-gan-power)
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
