Co-fabrication of planar Gunn diode and HEMT on InP substrate
- Submitting institution
-
University of Glasgow
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12-00786
- Type
- D - Journal article
- DOI
-
10.1109/TED.2014.2331368
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 2779
- Volume
- 61
- Issue
- 8
- ISSN
- 0018-9383
- Open access status
- Out of scope for open access requirements
- Month of publication
- August
- Year of publication
- 2014
- URL
-
http://eprints.gla.ac.uk/94540/
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
3
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The work described in the paper led to an Invited Talk at the IEEE ISNE 2019 (http://toc.proceedings.com/51319webtoc.pdf). The research was pivotal in drawing together international collaborators (Dr. Wang, Lecturer at Northwestern Polytechnic University, and Professor Hao, Fellow of Chinese Academy and Vice Chancellor at Xidian University) to develop high power THz signal sources, funded through the National Natural Science Foundation of China grants 61674117 and 61434006 and led to invitations to contribute to “The 2017 Terahertz Science and Technology Roadmap” (Journal of Physics D: Applied Physics).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
