Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1273
- Type
- D - Journal article
- DOI
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10.1109/TED.2017.2742578
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 4099
- Volume
- 64
- Issue
- 10
- ISSN
- 0018-9383
- Open access status
- Compliant
- Month of publication
- August
- Year of publication
- 2017
- URL
-
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- Supplementary information
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- Request cross-referral to
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- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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6
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- A key output from EPSRC grant (EP/M006727/1, £350k, 2014-2018, PI: W Zhang) and led to EPSRC grants (EP/S000259/1; EP/S000224/1). Developed a novel defect-tracking technique enabling defect characteristics in state-of-the-art filamentary resistive switching memory devices. Implemented at world-leading institute IMEC, Belgium by LJMU researchers and disseminated to core industrial partners including Intel, Samsung and Western Digital, it has been used to develop new emerging filamentary RRAM devices for process qualification and hardware security (Dr. Ludovic Goux, Emerging Memory Program Manager, Ludovic.Goux@imec.be). It has led to a presentation at the VLSI Symposium, 2016 (doi.org/10.1109/VLSIT.2016.7573402).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -