A novel non-intrusive technique for BTI characterization in SiC MOSFETs
- Submitting institution
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The University of Warwick
- Unit of assessment
- 12 - Engineering
- Output identifier
- 11838
- Type
- D - Journal article
- DOI
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10.1109/TPEL.2018.2870067
- Title of journal
- IEEE Transactions on Power Electronics
- Article number
- -
- First page
- 5737
- Volume
- 34
- Issue
- 6
- ISSN
- 0885-8993
- Open access status
- Compliant
- Month of publication
- June
- Year of publication
- 2019
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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1
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Bias Temperature Instability (BTI) is an issue affecting silicon carbide (SiC) power MOSFETs, which affects their reliability and prevents their wide adoption. This paper presents and describes a novel non-intrusive technique that can be used for monitoring the impact of BTI on the electrical parameters of SiC power MOSFETs. This work was presented as part of an Industrial Strategy Fund/ Innovate UK funded webinar series (https://www.electronicminds.co.uk/), joint with Electronic Minds (iain@electronicminds.co.uk), and underpinned two invited tutorials at the EPE and ICSCRM conferences in 2019. A collaboration and funding proposal with Aalborg University on this subject is under preparation (fia@et.aau.dk).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -