Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves
- Submitting institution
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University of York
- Unit of assessment
- 12 - Engineering
- Output identifier
- 55026305
- Type
- D - Journal article
- DOI
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10.1038/srep29845
- Title of journal
- Scientific Reports
- Article number
- 29845
- First page
- -
- Volume
- 6
- Issue
- -
- ISSN
- 2045-2322
- Open access status
- Compliant
- Month of publication
- July
- Year of publication
- 2016
- URL
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-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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9
- Research group(s)
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B - Intelligent Systems and Nano-Science
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This paper, in collaboration with Universities of Nanjing, Beijing Normal and Cambridge and Toshiba Research Europe Limited, demonstrates fabrication of vertical Fe/GaAs/Fe spin-valves by high quality molecular beam epitaxy. Successful spin injection in vertical SVs with a semiconductor interlayer opens a new avenue in exploring spin field effect transistors for data storage and processing. This work helped underpin the Nanjing-York Joint Centre’s collaboration with Huawei on Spin Technology. The body of this work led to Xu being invited to give plenary keynote talks at AFM2016 and CNCOM2017, and as editor of “Handbook of Spintronics”, 2016, Springer.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -