Reduction of polymer residue on wet–transferred CVD graphene surface by deep UV exposure
- Submitting institution
-
University of Plymouth
- Unit of assessment
- 12 - Engineering
- Output identifier
- 122
- Type
- D - Journal article
- DOI
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10.1063/1.4983185
- Title of journal
- Applied Physics Letters
- Article number
- 183103
- First page
- -
- Volume
- 110
- Issue
- 18
- ISSN
- 0003-6951
- Open access status
- Compliant
- Month of publication
- -
- Year of publication
- 2017
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
4
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- In many applications 2-dimensional materials are being explored to enhance the functional properties of devices. Graphene, with its excellent electrical, thermal and mechanical properties is grown on copper but to exploit its characteristics, it has to be transferred to silicon. This paper explores a process, developed at the University of Plymouth, to enable pristine monolayer graphene to be transferred to silicon. This will significantly impact the design of devices such as graphene field-effect transistor and solar cells, where conventional processing would be detrimental to the fundamental electrical characteristics of devices.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -