High performance transistors based on the controlled growth of triisopropylsilylethynyl-pentacene crystals via non-isotropic solvent evaporation
- Submitting institution
-
University of Sunderland
- Unit of assessment
- 12 - Engineering
- Output identifier
- 841
- Type
- D - Journal article
- DOI
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10.1039/c4ra02300e
- Title of journal
- RSC Adv.
- Article number
- -
- First page
- 20804
- Volume
- 4
- Issue
- 40
- ISSN
- 2046-2069
- Open access status
- Out of scope for open access requirements
- Month of publication
- March
- Year of publication
- 2014
- URL
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http://sure.sunderland.ac.uk/id/eprint/7758/
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
6
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- We demonstrated reliable high-performance organic field-effect transistors using a solution based active semiconductor triisopropylsilylethynyl-pentacene (TIPS-PEN). We designed a novel and facile ‘’non-isotropic solvent evaporation’’ method which allows control over the crystalline orientation and the growth direction of TIPS-PEN crystals in blade coated films. Also, the utilization of polymeric interlayers onto the SiO2/Si substrates resulted in great operational and environmental stability as a consequence of the high crystalline quality of TIPS-PEN and the subsequent efficient passivation. The presented experimental aspects opened interesting perspectives towards the control over the crystalline morphology and encouraged further studies on other solution-processed crystalline materials.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -