Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1266
- Type
- D - Journal article
- DOI
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10.1109/TED.2017.2691008
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 2478
- Volume
- 64
- Issue
- 6
- ISSN
- 0018-9383
- Open access status
- Compliant
- Month of publication
- April
- Year of publication
- 2017
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
5
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- A key research output of an EPSRC-funded project (EP/L010607/1). The proposed new method has been adopted by IMEC to qualify the processes developed for the IMEC-based Industrial Consortium (D. Linten, R&D Manager, dimitri.linten@imec.be). It laid the foundation for an Innovate UK grant award (£110k, 2018-2019). The work has been disseminated to Synopsys, a prime supplier of the Electronic Design Automation simulators, and has impacted its development of product design kits (X. Wang, Design Manager, Xingsheng.Wang@synopsys.com). It led to an invited funded presentation at the IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2017 (ylwu@ncnu.edu.tw).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
