Electrical activation of nitrogen heavily implanted 3C-SiC(100)
- Submitting institution
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The University of Warwick
- Unit of assessment
- 12 - Engineering
- Output identifier
- 10658
- Type
- D - Journal article
- DOI
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10.1016/j.apsusc.2015.06.169
- Title of journal
- Applied surface science
- Article number
- -
- First page
- 958
- Volume
- 353
- Issue
- -
- ISSN
- 0169-4332
- Open access status
- Out of scope for open access requirements
- Month of publication
- October
- Year of publication
- 2015
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- Yes
- Number of additional authors
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8
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work highlighted problems related to the doping of silicon carbide epitaxy materials available on the market. A £720k EPSRC fellowship (EP/P017363/1) was funded to address the issues raised, with work on-going into the use of alternative methods of doping to enable the development of ultra-high voltage power devices. Companies from across the value chain are actively involved in the project: Camutronics, Alstom Grid, Dynex and SICCAS. This research and award led to an invitation to Chair the “Advanced Epitaxy” session of the major European silicon carbide conference, ECSCRM 2018.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -