(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates
- Submitting institution
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The University of Sheffield
- Unit of assessment
- 12 - Engineering
- Output identifier
- 2657
- Type
- D - Journal article
- DOI
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10.1063/1.4939132
- Title of journal
- Applied Physics Letters
- Article number
- 261103
- First page
- -
- Volume
- 107
- Issue
- 26
- ISSN
- 0003-6951
- Open access status
- Out of scope for open access requirements
- Month of publication
- December
- Year of publication
- 2015
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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6
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The paper reports the development of semi-polar GaN for long-wavelength optical emitters manufactured on industry-matched substrates. Measurements based on electrical injection validated the results, providing a breakthrough in device performance and capability. The findings were published in an invited paper (Semicond. Sci. Technol. 31, (2016) 093003) and presented in three plenary and ten invited talks at major international conferences, including OMTA 2016/19. EPSRC is funding further research via the Future Compound Semiconductor Manufacturing Hub (EP/P006973/1, £10.5M). The technology led to three granted patents and enabled Seren Photonics (a spin-out company) to win the 2015 Royal Society Emerging Technology Award.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -