An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation
- Submitting institution
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The University of Warwick
- Unit of assessment
- 12 - Engineering
- Output identifier
- 7509
- Type
- D - Journal article
- DOI
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10.1109/TPEL.2014.2338792
- Title of journal
- IEEE Transactions on Power Electronics
- Article number
- -
- First page
- 2383
- Volume
- 30
- Issue
- 5
- ISSN
- 0885-8993
- Open access status
- Out of scope for open access requirements
- Month of publication
- May
- Year of publication
- 2015
- URL
-
-
- Supplementary information
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- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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7
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work benchmarks the switching losses and robustness of comparable power devices under reverse conduction. The paper contributed to the award of a £300k EPSRC grant on the performance of wide bandgap devices (http://www.powerelectronics.ac.uk/research). The results of the project have been implemented in a £30k EPSRC funded industrial feasibility study in collaboration with Bourns Inc (stephen.russell@bourns.com) for the development of field-stop IGBTs with co-packaged diodes. The paper was also the subject of an invited talk to a Reliability Symposium organized by the European Center of Power Electronics in 2017 in Denmark.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -