Polarization reversal and memory effect in anti-ferroelectric materials
- Submitting institution
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University of Portsmouth
- Unit of assessment
- 12 - Engineering
- Output identifier
- 10697383
- Type
- D - Journal article
- DOI
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10.1016/j.scriptamat.2016.10.004
- Title of journal
- Scripta Materialia
- Article number
- -
- First page
- 61
- Volume
- 128
- Issue
- -
- ISSN
- 1359-6462
- Open access status
- Compliant
- Month of publication
- October
- Year of publication
- 2016
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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2
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This international collaboration with two USA Universities (Iowa State and Central Michigan) resulted in the experimental discovery of a novel memory effect in anti-ferroelectric materials. The paper demonstrates that anti-ferroelectric materials display 4 memory states, capable of storing 2-bits per memory cell. This work attracted successful grant funding from EPSRC (EP/R028656/1), Diamond Light Source (EE18495) in partnership with Western Digital. This work also received invited talks at the IEEE Magnetics Society, Santa Clara Chapter, California, July 2018 and Iowa State University, Ames, USA, November 2018.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -