Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1262
- Type
- D - Journal article
- DOI
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10.1109/TED.2016.2590946
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 3642
- Volume
- 63
- Issue
- 9
- ISSN
- 0018-9383
- Open access status
- Compliant
- Month of publication
- August
- Year of publication
- 2016
- URL
-
-
- Supplementary information
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- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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9
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work was supported by an EPSRC project (£517k, EP/L010607/1, PI: J.F. Zhang, 2014-2018), co-authored with researchers from world-leading companies, Arm Holdings, Qualcomm, Synopsys, and IMEC. The work was carried out on the test samples supplied by its partners and the interactions with industrial researchers during this work impacted industry’s assessment of process quality (dvigar@qti.qualcomm.com). It underpinned the follow-up EPSRC grant application (£373k, EP/S000259/1, PI: W. Zhang, 2018-2021) with the same team. It led to an invited presentation at the IEEE 13th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 2016 and an invited paper in Microelectronics Reliability (grasser@iue.tuwien.ac.at).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -