Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode
- Submitting institution
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De Montfort University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12124
- Type
- D - Journal article
- DOI
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10.1063/1.4868705
- Title of journal
- Journal of Applied Physics
- Article number
- 114502
- First page
- -
- Volume
- 115
- Issue
- 11
- ISSN
- 0021-8979
- Open access status
- Out of scope for open access requirements
- Month of publication
- March
- Year of publication
- 2014
- URL
-
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- Supplementary information
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- Request cross-referral to
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- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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14
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The Indium Gallium Arsenide (In0.2Ga0.8As) millimetric and THz planar Gunn diodes reopened interest in the Far East (Shandong University) in two terminal microwave amplification (doi.org/10.1002/mop.31261) and generated interest from companies like e2v Technology (UK) in the use of the device as a monolithic microwave integrated circuit (MMIC) oscillator (Contact: Senior Engineer, Teledyne e2V). Work has recently been published by Aberdeen, Cranfield and De Montfort Universities showing shaping the device electrodes may be the way of increasing the RF output power. Further experimental investigations are also underway in developing high Q resonant circuits to improve the RF output power (DOI: 10.1109/jeds.2020.3029184).
- Author contribution statement
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- Non-English
- No
- English abstract
- -