Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon
- Submitting institution
-
The University of Lancaster
- Unit of assessment
- 12 - Engineering
- Output identifier
- 259167243
- Type
- D - Journal article
- DOI
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10.1021/acsphotonics.8b01550
- Title of journal
- ACS Photonics
- Article number
- -
- First page
- 538
- Volume
- 6
- Issue
- 2
- ISSN
- 2330-4022
- Open access status
- Compliant
- Month of publication
- January
- Year of publication
- 2019
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- Yes
- Number of additional authors
-
10
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work was supported through a RAEng Research Fellowship (GN 10216/114, valued at £570K, 1/11/12-31/1/18) and an EPSRC first grant (EP/N018605/1, valued at £125K, 1/5/16-31/1/19). These were supported by industrial partners: IQE, Compound Semiconductor Technologies, Procal, Pilkington and Gas Sensing Solutions. The work led to an invited seminar at Osram Opto Semiconductors, Regensburg, Germany (14/03/19). Additional it led to an invitation to serve on the committee for MIOMD which is a major well-established international conference on infrared technologies. The breakthrough achieved in III-V/Si epitaxy attracted widespread attention from the semiconductor media and featured on Semiconductor Today: http://www.semiconductor-today.com/news_items/2019/feb/lancasteruni_190219.shtml
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
