All-GaN-integrated cascode heterojunction field effect transistors
- Submitting institution
-
Cardiff University / Prifysgol Caerdydd
- Unit of assessment
- 12 - Engineering
- Output identifier
- 96921983
- Type
- D - Journal article
- DOI
-
10.1109/TPEL.2016.2643499
- Title of journal
- IEEE Transactions on Power Electronics
- Article number
- -
- First page
- 8743
- Volume
- 32
- Issue
- 11
- ISSN
- 0885-8993
- Open access status
- Compliant
- Month of publication
- February
- Year of publication
- 2017
- URL
-
http://dx.doi.org/10.1109/TPEL.2016.2643499
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
9
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- For the first time, a gallium nitride (GaN) integrated CASCODE transistor is demonstrated, allowing normally-off operation of power devices by combining low and high-voltage devices. For GaN, this is normally achieved through integration of a discrete Silicon low voltage device and a normally-on GaN power device. The wafer level integration demonstrated offers advantages of reduced capacitance and increased switching speed. The device developed was initially funded through the EPSRC "PowerGaN" project (EP/K014471/1) (£6.2M) and further development is ongoing through the "Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates" (EP/N016408/1) project (£0.6M).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -