Strain-engineered inverse charge-funnelling in layered semiconductors
- Submitting institution
-
University of Durham
- Unit of assessment
- 12 - Engineering
- Output identifier
- 116633
- Type
- D - Journal article
- DOI
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10.1038/s41467-018-04099-7
- Title of journal
- Nature communications
- Article number
- 1652
- First page
- -
- Volume
- 9
- Issue
- -
- ISSN
- 20411723
- Open access status
- Compliant
- Month of publication
- -
- Year of publication
- 2018
- URL
-
https://doi.org/10.1038/s41467-018-04099-7
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
4
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The ability to control the band gap in semiconductors, and change it locally, gives a new degree of freedom in the design of electronic devices. Here, we demonstrated inverse charge funnelling through local band gap modification, a method that increases the efficiency of solar energy harvesting by simple fabrication means. Crucially, this paper has also uncovered a new way to locally “write” dielectric layers with a laser beam [Science Advances 18, eaau0906 (2019)], enabling laboratory and small manufacturers to produce feature sizes and shapes that were previously available only to large fabrication plants.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
