Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-kappa Intergate Dielectrics of Flash Memory Cells
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1281
- Type
- D - Journal article
- DOI
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10.1109/TED.2014.2313041
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 1299
- Volume
- 61
- Issue
- 5
- ISSN
- 0018-9383
- Open access status
- Out of scope for open access requirements
- Month of publication
- April
- Year of publication
- 2014
- URL
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- Supplementary information
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- Request cross-referral to
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- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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10
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The key output from EPSRC grants EP/C508793/1 and EP/C508793/2 (2005-2008, £123k, PI: W. Zhang) and the subsequent formal collaboration agreement with world-leading research consortium IMEC (2009–2012, €300k). The first work to demonstrate fast electron trapping/detrapping in the high-k dielectric stacks as a major source of window instability in flash memory devices, and its suppression by novel multilayer high-κ structures. Collaboration with and implementation at IMEC and its core industry partners including Intel and Samsung, in the development of 3D non-volatile memory (Dr. J. Van Houdt, IMEC Science Director, Jan.VanHoudt@imec.be); it led to an invited talk at ICSICT 2014 (10.1109/ICSICT.2014.7021483).
- Author contribution statement
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- Non-English
- No
- English abstract
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