Doping dependence of the Raman spectrum of defected graphene
- Submitting institution
-
University of Exeter
- Unit of assessment
- 12 - Engineering
- Output identifier
- 6023
- Type
- D - Journal article
- DOI
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10.1021/nn502676g
- Title of journal
- ACS Nano
- Article number
- -
- First page
- 7432
- Volume
- 8
- Issue
- 7
- ISSN
- 1936-0851
- Open access status
- Out of scope for open access requirements
- Month of publication
- July
- Year of publication
- 2014
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
5
- Research group(s)
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E - Nano Engineering Science and Technology
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- First-ever investigation of the combined effect of defects and doping on the Raman spectrum on graphene resulting in a novel formula for estimating the defect concentration in doped samples. These results generated widespread interest in academia (e.g. taken up by the Dresselhaus Group at MIT, Hartschuh Group at LMU Munich). As result of this work Ott was invited to become a member of technical committee 113 (TC113), where she acts on behalf of the Graphene Flagship Standardisation Committee in the International Electrotechnical Commission (IEC). This work is in the process of becoming an international standard (committee draft IEC CD 62607-6-11).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -