A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States
- Submitting institution
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King's College London
- Unit of assessment
- 12 - Engineering
- Output identifier
- 126462096
- Type
- D - Journal article
- DOI
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10.1021/acs.nanolett.5b04296
- Title of journal
- Nano Letters
- Article number
- -
- First page
- 1602
- Volume
- 16
- Issue
- 3
- ISSN
- 1530-6984
- Open access status
- Out of scope for open access requirements
- Month of publication
- February
- Year of publication
- 2016
- URL
-
-
- Supplementary information
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-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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4
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Towards building energy-efficient nanoscale devices for brain-inspired computing systems, this paper reports the experimental demonstration of quantum transport at record low operating voltages in an electronic memory device that is compatible with today's semiconductor fabrication processes. The device, fabricated by thermally diffusing Cu ions into a thin SiO2 layer sandwiched between Cu and W electrodes, exhibited quantum states at room temperature below 250 mV. Building upon this work, this device was later shown by us to exhibit characteristics that mimic biological synapses. The results have been presented in invited talks at IEEE NVMTS 2019, IMW 2019, and ECS2017.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -