Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1259
- Type
- D - Journal article
- DOI
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10.1109/TED.2014.2314178
- Title of journal
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Article number
- -
- First page
- 1307
- Volume
- 61
- Issue
- 5
- ISSN
- 0018-9383
- Open access status
- Out of scope for open access requirements
- Month of publication
- April
- Year of publication
- 2014
- URL
-
-
- Supplementary information
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- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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11
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- A key output of EPSRC grants (EP/I012966/1&EP/I012907/1, 2011-2014, £462k & £537k) in collaboration with IMEC, the world’s largest micro/nanoelectronics research centre, which is significant for its investigation of negative-bias-temperature-instabilities and proposed energy-switching model for device lifetime prediction of sub-10 nm Ge technology nodes. Disseminated to IMEC’s industrial partners: Intel, Samsung, Sony and ARM (Dr. Dimitri Linten, IMEC device characterisation manager, dimitri.linten@imec.be), it led to a fully-funded keynote presentation at the 2015 IEEE Symposium: Device Engineering and Technology, Shanghai, China. It forms part of a portfolio of work that underpins a subsequent EPSRC award (EP/M006727/1, 2015-2018, £350k).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -