Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
- Submitting institution
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The University of Liverpool
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12279
- Type
- D - Journal article
- DOI
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10.1063/1.4868091
- Title of journal
- Journal of Applied Physics
- Article number
- 114102
- First page
- -
- Volume
- 115
- Issue
- 11
- ISSN
- 0021-8979
- Open access status
- Out of scope for open access requirements
- Month of publication
- March
- Year of publication
- 2014
- URL
-
-
- Supplementary information
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- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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10
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The research was underpinned by the EPSRC funded project (EP/I012907/1) as collaboration with NCSR Demokritos (Greece), Daresbury NCESS (UK) and Woollam Inc. (USA) to deliver solution of industry-relevant interfacial layer in a gate stack on germanium. It attracted further collaborative projects on interfacial engineering using rare-earth oxides on Si with CNRS (France) and KTH (Sweden) EU ESTEEM2 project (https://cordis.europa.eu/project/id/312483/reporting, contact: p.bersans@euronovia-conseil.eu) and on GaN (EPSRC ?Digital in India? EP/P510981/1). The work was the subject of an invited talk at the 225th Electrochemical Society Spring Meeting, Symposium N2 ?Dielectrics for Nanosystems?, May 2014, Florida, USA (https://ecs.confex.com/ecs/225/webprogram/Paper30630.html, DOI: 10.1149/06102.0073ecst).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
