Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices
- Submitting institution
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Sheffield Hallam University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 3719
- Type
- D - Journal article
- DOI
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10.1063/1.4936962
- Title of journal
- Journal of Applied Physics
- Article number
- -
- First page
- 224308
- Volume
- 118
- Issue
- 224308
- ISSN
- 0021-8979
- Open access status
- Out of scope for open access requirements
- Month of publication
- December
- Year of publication
- 2015
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- 9 - Physics
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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10
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- Funded on an EPSRC (UK) DTG award and a University of Leeds FIRC 2011 grant, in conjunction with NSF Award ECCS-1001431 and the Defense Advanced Research Project Agency (DARPA) under Contract D11PC20027, the work was a collaboration between University of Leeds, Purdue University and SHU looking at electron transport in epitaxially grown nitride-based resonant tunneling diodes (RTDs) and superlattice sequential tunneling devices. The work showed excellent agreement between measured current– voltage characteristics and values calculated by density matrix formalism and could be considered to be an excellent design and optimisation tool for quantum devices such as QCLs.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -