Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
- Submitting institution
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University College London
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12723
- Type
- D - Journal article
- DOI
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10.1021/acsnano.9b08943
- Title of journal
- ACS Nano
- Article number
- acsnano.9b08943
- First page
- 3316
- Volume
- 14
- Issue
- 3
- ISSN
- 1936-0851
- Open access status
- Compliant
- Month of publication
- March
- Year of publication
- 2020
- URL
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- Supplementary information
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- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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10
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- National (Imperial College) and International (University of Sydney) co-authors. First demonstration of utilising a new dopant, arsenic, since the atomic scale dopant placement technique was invited for phosphorus in 2003. Resulted in invited talks at the Workshop on Atomically Precise Fabrication of Solid-State Quantum Devices, Dallas, March 20-21, 2020 and American Chemical Society Spring Meeting, Philadelphia, March 22-26, 2020. Based on these results the UCL group joined a DoE National Quantum Information Science Research Center $60M proposal (PI S. Moheimani). UCL was the only non-USA Co-Investigator. Led to funded Innovate UK (Project 75574)/NSERC (Canada) Quantum Technologies grant: £108k to UCL.
- Author contribution statement
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- Non-English
- No
- English abstract
- -