A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT
- Submitting institution
-
University of Glasgow
- Unit of assessment
- 12 - Engineering
- Output identifier
- 12-05592
- Type
- D - Journal article
- DOI
-
10.1109/LED.2014.2334394
- Title of journal
- IEEE Electron Device Letters
- Article number
- -
- First page
- 906
- Volume
- 35
- Issue
- 9
- ISSN
- 0741-3106
- Open access status
- Out of scope for open access requirements
- Month of publication
- September
- Year of publication
- 2014
- URL
-
http://eprints.gla.ac.uk/94794/
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
7
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This output results from the EPSRC GaN electronic device project and (EP/K014471/1, https://gow.epsrc.ukri.org/NGBOViewGrant.aspx?GrantRef=EP/K014471/1, £6.1m) with DSTL and a consortium of 10 industrial partners including Plessey. The paper provided critical evidence to support an EPSRC grant (EP/R024413/1, https://gow.epsrc.ukri.org/NGBOViewGrant.aspx?GrantRef=EP/R024413/1, £570k) to develop high power devices for high ambient temperature (300 degC) operation, a project supported by major UK companies including INEX Microtechnology, Optocap and Rolls Royce. The reported device resulted in an international collaboration with NTT, Japan in emerging GaN power devices.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
