A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI
- Submitting institution
-
University of Bristol
- Unit of assessment
- 12 - Engineering
- Output identifier
- 108546701
- Type
- D - Journal article
- DOI
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10.1109/TPEL.2017.2669879
- Title of journal
- IEEE Transactions on Power Electronics
- Article number
- 7880639
- First page
- 581
- Volume
- 33
- Issue
- 1
- ISSN
- 0885-8993
- Open access status
- Compliant
- Month of publication
- March
- Year of publication
- 2017
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
7
- Research group(s)
-
J - Electrical Energy Management Group
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This paper reports an arbitrary-waveform-generating chip with a record-breaking time resolution of 100ps, the first that is fast enough to vary gate voltages of GaN transistors to reduce electromagnetic emissions. The power conversion industry is looking to GaN for 10x performance improvements over silicon, but extreme emissions are impeding adoption. Invited talks and request for chips followed publication - Uni Magdeburg bought 10 devices, and achieved an IEEE Trans. Power Electronics paper on emissions-cancelling gate waveforms. A consortium of 4 UK universities and 8 companies subsequently won £1.98M (EPSRC EP/R029504/1) to take this research further under our leadership.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
