Role of charge traps in the performance of atomically thin transistors
- Submitting institution
-
University of Durham
- Unit of assessment
- 12 - Engineering
- Output identifier
- 116631
- Type
- D - Journal article
- DOI
-
10.1002/adma.201605598
- Title of journal
- Advanced Materials
- Article number
- 1605598
- First page
- -
- Volume
- 29
- Issue
- 19
- ISSN
- 09359648
- Open access status
- Compliant
- Month of publication
- -
- Year of publication
- 2017
- URL
-
https://doi.org/10.1002/adma.201605598
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
7
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- To design high quality devices based on atomically thin semiconductors, the physical mechanisms underpinning their operation must be understood. This paper addresses the challenge of slow carrier dynamics and provides new tools to analyse time evolution of currents in these devices, supported by a detailed analytical model developed by the authors. The newly discovered phenomenon is demonstrated using different materials and several devices, and proves to be completely transferable to other material systems that are thinner than the electrostatic screening length. The new method has been adapted by leading groups around the world (e.g., Advanced Materials 30, 1800220 (2018)).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
