Introduction of misfit dislocations into strained-layer GaAs/InxGa1–xAs/GaAs heterostructures by mechanical bending
- Submitting institution
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University of Portsmouth
- Unit of assessment
- 11 - Computer Science and Informatics
- Output identifier
- 25020149
- Type
- D - Journal article
- DOI
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10.1063/5.0016476
- Title of journal
- Journal of Applied Physics
- Article number
- 125708
- First page
- -
- Volume
- 128
- Issue
- 12
- ISSN
- 0021-8979
- Open access status
- Compliant
- Month of publication
- September
- Year of publication
- 2020
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- Yes
- Number of additional authors
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1
- Research group(s)
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B - Computational Intelligence
- Citation count
- 0
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work shows that some telecommunications lasers are less reliable than previously assumed. The long-term reliability of strained-layer semiconductor lasers is vital in digital optical telecommunications, where a lifetime of 20+ years is expected. Mechanical bending is shown to relax the strained layer through dislocation formation at temperatures well below the original fabrication temperature. These tests are a proxy for long-term stability testing. Gideon Yoffe, VP Photonics Hardware at Fiber Sense, states “This work will influence the design and the mechanical packaging processes of laser diodes for fibre telecommunications.” gideon.yoffe@fiber-sense.com
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -