Failure and reliability analysis of a SiC power module based on stress comparison to a Si device
- Submitting institution
-
University of Greenwich
- Unit of assessment
- 12 - Engineering
- Output identifier
- 20213
- Type
- D - Journal article
- DOI
-
10.1109/TDMR.2017.2766692
- Title of journal
- IEEE Transactions on Device and Materials Reliability
- Article number
- -
- First page
- 727
- Volume
- 17
- Issue
- 4
- ISSN
- 1530-4388
- Open access status
- Compliant
- Month of publication
- -
- Year of publication
- 2017
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
1
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- The paper is significant, as this multi-disciplinary study is the first to compare and optimise the reliability of compound semiconductor SiC to Si packages. Compound semiconductors are set to replace Si in several high-performance applications, as demonstrated by the UK Government investment in a new Catapult Centre. The work also contributed to our award of a new EPSRC project (EP/R004390/1).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
