Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures
- Submitting institution
-
University of Nottingham, The
- Unit of assessment
- 9 - Physics
- Output identifier
- 1330643
- Type
- D - Journal article
- DOI
-
10.1021/acs.nanolett.8b01376
- Title of journal
- Nano Letters
- Article number
- -
- First page
- 3950
- Volume
- 18
- Issue
- 6
- ISSN
- 1530-6984
- Open access status
- Compliant
- Month of publication
- May
- Year of publication
- 2018
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
15
- Research group(s)
-
D - Experimental Condensed Matter and Nanoscience
- Citation count
- 29
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- -
- Author contribution statement
- Professor Amalia Patanè contributed to this work by: i) the provision of InSe crystals with high electron mobility, as required to fabricate quantum point contacts and quantum dots; ii) interpretation of the data; iii) discussion and revision of the drafted manuscript. The material development and studies of the high electron mobility crystals were conducted by Patanè and her post-doctoral research associate (Dr. Zakhar R. Kudrynskyi, also co-author of this paper) within the EU Graphene Flagship (2014-2023) and Engineering and Physical Sciences Research Council [EP/M012700/1, 2015-2018] funding awarded to Patanè.
- Non-English
- No
- English abstract
- -
