Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
- Submitting institution
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Liverpool John Moores University
- Unit of assessment
- 12 - Engineering
- Output identifier
- 1263
- Type
- D - Journal article
- DOI
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10.1109/TED.2018.2792221
- Title of journal
- IEEE Transactions on Electron Devices
- Article number
- -
- First page
- 970
- Volume
- 65
- Issue
- 3
- ISSN
- 0018-9383
- Open access status
- Compliant
- Month of publication
- January
- Year of publication
- 2018
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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12
- Research group(s)
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D - RCEEE
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- A key output from EPSRC grants (EP/M006727/1, EP/M00662X/1 and EP/M009297/1, 2014-2018) that has led to a further EPSRC award (EP/S000259/1, £378k, 2018-2021, PI: W Zhang). A novel technique enabling the identification of defects in state-of-the-art resistive switching memory devices, implemented by LJMU researchers at the world-leading IMEC institute in Belgium. The work has been used in the development of new emerging non-filamentary RRAM devices (€300k, costed by IMEC, Dr. Arnaud Furnemont, VP Memory & Storage, Arnaud.Furnemont@imec.be); disseminated to IMEC’s core industrial partners including Intel, Samsung and Western Digital; and led to a presentation at the pre-eminent IEDM conference (doi.org/10.1109/IEDM.2016.7838466).
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
